MRF1513NT1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies to 520 MHz. The high gain and broadband performance of this device
make it ideal for large-signal, common source amplifier applications in 7.5 volt
portable and 12.5 volt mobile FM equipment.
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Specified Performance @ 520 MHz, 12.5 Volts
Output Power ? 3 Watts
Power Gain ? 15 dB
Efficiency ? 65%
?
Capable of Handling 20:1 VSWR, @ 15.5 Vdc,
520 MHz, 2 dB Overdrive
Features
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Excellent Thermal Stability
?
Characterized with Series Equivalent Large-Signal
Impedance Parameters
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N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
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In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,
7 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +40
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Drain Current ? Continuous
ID
2
Adc
Total Device Dissipation @ TC
= 25
°C (1)
Derate above 25°C
PD
31.25
0.25
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
150
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2)
Unit
Thermal Resistance, Junction to Case
RθJC
4
°C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22-A113, IPC/JEDEC J-STD-020
3
260
°C
1. Calculated based on the formula PD
=
TJ?TC
RθJC
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
NOTE - CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MRF1513N
Rev. 12, 6/2009
Freescale Semiconductor
Technical Data
MRF1513NT1
520 MHz, 3 W, 12.5 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466-03, STYLE 1
PLD-1.5
PLASTIC
G
D
S
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Freescale Semiconductor, Inc., 2008-2009. All rights reserved.
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